 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTE51 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE51 is a silicon NPN transistor in a TO220 type package designed for high-voltage, high- speed power switching inductive circuits where fall time is critical. This device is particularly suited for 115V and 220V SWITCHMODE applications such as switching regulators, Inverters, motor controls, solenoid/relay drivers and deflection circuits. Features: D Reverse Bias SOA with Inductive Loads @ TC = +100C D 700V Blocking Capability Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector-Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V Collector Current,IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Emitter Current, IE Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16mW/C Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W Lead Temperature (During Soldering, 1/8" from case, 5sec), TL . . . . . . . . . . . . . . . . . . . . . . . +275C Electrical Characteristics: (TC = +25C unless otherwise Specified) Parameter OFF Characteristics (Note 1) Collector-Emitter Sustaining Voltage Collector Cutoff Current VCEO(sus) Ic = 10mA, IB = 0 ICEV VCEV = 700V, VBE(off) = 1.5V VCEV = 700V, VBE(off) = 1.5V, TC = +100C Emitter Cutoff Current IEBO VEB = 9V, Ic = 0 400 - - - - - - - - 1 1 1 V mA mA mA Symbol Test Conditions Min Typ Max Unit Note 1. Pulse test: Pulse Width = 300s, Duty Cycle = 2%. Electrical Characteristics (Cont'd): (TC = +25C unless otherwise Specified) Parameter ON Characteristics (Note 1) DC Current Gain Collector-Emitter Saturation Voltage hFE VCE(sat) VCE = 5V, IC = 1A VCE = 5V, IC = 2A IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A IC = 2A, IB = 0.5A, TC = +100C IC = 4A, IB = 1A Dynamics Characteristics Current Gain-Bandwidth Product Output Capacitance Delay Time Rise Time Storage Time Fall Time Voltage Storage Time Crossover Time Fall Time fT Cob td tr ts tf tsv tc tfi Vclamp = 300V, IB1 = 0.4A, VBE(off) = 5V VCE = 10V, IC = 500mA, f = 1MHz VCB = 10V, IE = 0, f = 0.1MHz VCC = 125V, IC = 2A, IB1 = IB2 = 0.4A, tp = 25s, Duty Cycle 1% 4 - - - - - - - - - 65 0.025 0.3 1.7 0.4 0.9 0.32 0.16 - - 0.1 0.7 4.0 0.9 4.0 0.9 - MHz pF s s s s s s s 10 8 - - - - - - - - - - 60 40 0.5 0.6 1.0 1.0 V V V V Symbol Test Conditions Min Typ Max Unit Switching Characteristics (Resistive Load) Switching Characteristics (Inductive Load, Clamped) Note 1. Pulse test: Pulse Width = 300s, Duty Cycle = 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab |
Price & Availability of NTE51
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |